BJT Modeling With VBIC, Basics and v1.3 Updates
نویسندگان
چکیده
This paper reviews the VBIC BJT model, and details updates in the version 1.3 release. VBICv1.3 includes explicit interaction with simulator global parameters gmin and pnjmaxi, explicit limiting of local temperature rise and exponential arguments to aid convergence, and an excess phase formulation that obviates the need for inductor currents and is implementable with only voltage controlled current and charge sources. Enhancements to VBIC include modeling of quasi-neutral base recombination, depletion modulation of C R for vertical PNPs, an arbitrary collector doping profile model for bc C for accurate large-signal distortion modeling, improved electrothermal modeling, and a collector pinning modeling for PNPs.
منابع مشابه
Kharkov National University of Radioelectronics
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تاریخ انتشار 2003